Invention Grant
- Patent Title: Production of spacers at flanks of a transistor gate
- Patent Title (中): 在晶体管栅极的侧面制造间隔物
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Application No.: US14855834Application Date: 2015-09-16
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Publication No.: US09543409B2Publication Date: 2017-01-10
- Inventor: Christian Arvet , Sebastien Barnola , Sebastien Lagrasta , Nicolas Posseme
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
- Applicant Address: FR Paris FR Montrouge FR Crolles
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS SA,STMICROELECTRONICS (Crolles 2) SAS
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS SA,STMICROELECTRONICS (Crolles 2) SAS
- Current Assignee Address: FR Paris FR Montrouge FR Crolles
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1458759 20140917
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/283 ; H01L21/311 ; H01L29/423 ; H01L29/51
Abstract:
The production of spacers at flanks of a transistor gate, including a step of forming a dielectric layer covering the gate and a peripheral region of a layer of semiconductor material surrounding the gate, including forming a superficial layer covering the gate and the peripheral region; partially removing the superficial layer configured so as to completely remove the superficial layer at the peripheral region while preserving a residual part of the superficial layer at the flanks; and selective etching of the dielectric layer vis-à-vis the material of the residual part of the superficial layer and vis-à-vis the semiconductor material.
Public/Granted literature
- US20160079388A1 PRODUCTION OF SPACERS AT FLANKS OF A TRANSISTOR GATE Public/Granted day:2016-03-17
Information query
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