Invention Grant
- Patent Title: Oxynitride semiconductor thin film
- Patent Title (中): 氧氮化物半导体薄膜
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Application No.: US14773531Application Date: 2014-03-06
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Publication No.: US09543447B2Publication Date: 2017-01-10
- Inventor: Eiichiro Nishimura , Tokuyuki Nakayama , Masashi Iwara
- Applicant: SUMITOMO METAL MINING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO METAL MINING CO., LTD.
- Current Assignee: SUMITOMO METAL MINING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Katten Muchin Rosenman LLP
- Priority: JP2013-047315 20130308
- International Application: PCT/JP2014/055875 WO 20140306
- International Announcement: WO2014/136916 WO 20140912
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; C01B21/082 ; H01L29/04 ; H01L29/24 ; H01L29/66
Abstract:
The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.
Public/Granted literature
- US20160020328A1 OXYNITRIDE SEMICONDUCTOR THIN FILM Public/Granted day:2016-01-21
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