-
公开(公告)号：US09670578B2
公开(公告)日：2017-06-06
申请号：US15117531
申请日：2015-02-12
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B2235/3284 , C04B2235/3286 , C04B2235/656 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C23C14/08 , C23C14/086 , C23C14/5853 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This crystalline oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 8.0×1017 cm−3 or less and a carrier mobility of 10 cm2/V·s or greater.
-
公开(公告)号：US09688580B2
公开(公告)日：2017-06-27
申请号：US15303878
申请日：2015-04-15
IPC分类号： C04B35/45 , C04B35/00 , C23C14/08 , C23C14/34 , C04B35/622 , C23C14/58 , H01J37/34 , H01L21/02 , H01L29/04 , H01L29/66 , H01L29/786
CPC分类号： C04B35/45 , C04B35/00 , C04B35/01 , C04B35/62218 , C04B35/6261 , C04B2235/3281 , C04B2235/3282 , C04B2235/3286 , C04B2235/5436 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6585 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C23C14/0036 , C23C14/08 , C23C14/086 , C23C14/087 , C23C14/34 , C23C14/3414 , C23C14/5806 , H01J37/3429 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/02667 , H01L29/04 , H01L29/6675 , H01L29/78693
摘要： Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2V−1 sec−1 or higher.
-
公开(公告)号：US09670577B2
公开(公告)日：2017-06-06
申请号：US15117529
申请日：2015-02-12
IPC分类号： C04B35/453 , H01B1/02 , C23C14/34 , H01L21/02 , C23C14/08 , C23C14/58 , C04B35/01 , H01L29/786 , C04B35/626
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/6261 , C04B2235/3284 , C04B2235/3286 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6583 , C04B2235/6585 , C04B2235/6586 , C04B2235/76 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C23C14/08 , C23C14/086 , C23C14/5806 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/78693
摘要： An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.20 or more and 0.49 or less in terms of Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn/(In+Ga+Zn) atomic ratio. This amorphous oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 4.0×1018 cm−3 or less and a carrier mobility of 10 cm2/V*s or greater.
-
公开(公告)号：US10000842B2
公开(公告)日：2018-06-19
申请号：US15319578
申请日：2015-06-24
IPC分类号： H01L21/02 , C23C14/34 , C04B35/01 , C04B35/64 , C04B35/622 , H01L29/786 , H01L29/22 , H01L29/24 , H01L21/465 , H01J37/34 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/62218 , C04B35/64 , C04B2235/3208 , C04B2235/3213 , C04B2235/3275 , C04B2235/3279 , C04B2235/3286 , C04B2235/3296 , C04B2235/5436 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/6586 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C23C14/08 , C23C14/086 , C23C14/3407 , H01J37/3426 , H01J37/3429 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/465 , H01L29/2206 , H01L29/245 , H01L29/247 , H01L29/66969 , H01L29/78693
摘要： Provided is an oxide sintered body that, when used to obtain an oxide semiconductor thin film by sputtering, can achieve a low carrier concentration and a high carrier mobility. Also provided is a sputtering target using the oxide sintered body. The oxide sintered body contains, as oxides, indium, gallium, and at least one positive divalent element selected from the group consisting of nickel, cobalt, calcium, strontium, and lead. The gallium content, in terms of the atomic ratio Ga/(In+Ga), is from 0.20 to 0.45, and the positive divalent element content, in terms of the atomic ratio M/(In+Ga+M), is from 0.0001 to 0.05. The amorphous oxide semiconductor thin film, which is formed using the oxide sintered body as a sputtering target, can achieve a carrier concentration of less than 3.0×1018 cm−3 and a carrier mobility of at least 10 cm2V−1 sec−1.
-
公开(公告)号：US09941415B2
公开(公告)日：2018-04-10
申请号：US15306915
申请日：2015-05-20
IPC分类号： H01L29/12 , H01L29/786 , C04B35/03 , C23C14/34 , C23C14/08 , H01L29/24 , H01L21/02 , H01L29/66
CPC分类号： H01L29/78693 , C04B35/01 , C04B35/03 , C04B35/6261 , C04B35/645 , C04B2235/3206 , C04B2235/3286 , C04B2235/5436 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/72 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C23C14/08 , C23C14/082 , C23C14/34 , C23C14/3414 , H01J37/3426 , H01J2237/332 , H01L21/02422 , H01L21/02565 , H01L21/0257 , H01L21/02592 , H01L21/02631 , H01L21/02667 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×1018 cm−3, and a carrier mobility of 10 cm2V−1 sec−1 or higher.
-
公开(公告)号：US09543447B2
公开(公告)日：2017-01-10
申请号：US14773531
申请日：2014-03-06
IPC分类号： H01L29/786 , H01L21/02 , C01B21/082 , H01L29/04 , H01L29/24 , H01L29/66
CPC分类号： H01L29/7869 , C01B21/0821 , C01P2006/40 , H01L21/02521 , H01L21/02554 , H01L21/02565 , H01L21/02667 , H01L29/04 , H01L29/24 , H01L29/66969
摘要： The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.
摘要翻译： 本发明的目的是提供一种氧化物半导体薄膜，其具有相对高的载流子迁移率，并且适合作为来自氮氧化物晶体薄膜的TFT的沟道层材料。 根据本发明，通过对包含In，O和N的非晶氮氧化物半导体薄膜或含有In，O，N和附加元素M的非晶氮氧化物半导体薄膜进行退火，得到结晶氮氧化物半导体薄膜，其中 M是选自Zn，Ga，Ti，Si，Ge，Sn，W，Mg，Al，Y和稀土元素中的一种或多种元素，加热温度为200℃以上，加热时间为1 分钟至120分钟。
-
公开(公告)号：US10559823B2
公开(公告)日：2020-02-11
申请号：US15753175
申请日：2016-08-22
发明人： Tatsuya Takahashi , Masashi Iwara
IPC分类号： H01M4/505 , H01M4/525 , C01G53/00 , H01M10/052 , C01G45/00 , H01M10/0525 , H01M4/02
摘要： A manganese nickel composite hydroxide which serves as a starting material for positive electrode active materials for secondary batteries, and the secondary battery having low resistance and high output characteristics. A manganese nickel composite hydroxide according to the present invention is represented by general formula (A) Mn1−x−yNixMy(OH)2+α(wherein 0≤×≤0.27, 0≤y≤0.05, 0≤α≤0.5, and M represents at least one element selected from among Mg, Al, Ca, Ba, Sr, Ti, V, Fe, Cr, Co, Cu, Zr, Nb, Mo and W), and has an SO4 content of 0.90% by weight or less, an Na content of 0.04% by weight or less, a BET specific surface area of from 40 m2/g to 70 m2/g (inclusive), and a value obtained by [(d90-d10)/(average particle diameter)] of 0.90 or less, said value being an index indicating the expanse of the particle size distribution.
-
公开(公告)号：US20180205079A1
公开(公告)日：2018-07-19
申请号：US15753175
申请日：2016-08-22
发明人： Tatsuya Takahashi , Masashi Iwara
IPC分类号： H01M4/505 , H01M10/0525 , H01M4/525
摘要： A manganese nickel composite hydroxide which serves as a starting material for positive electrode active materials for secondary batteries, and the secondary battery having low resistance and high output characteristics. A manganese nickel composite hydroxide according to the present invention is represented by general formula (A) Mn1−x−yNixMy(OH)2+α (wherein 0≤×≤0.27, 0≤y≤0.05, 0≤α≤0.5, and M represents at least one element selected from among Mg, Al, Ca, Ba, Sr, Ti, V, Fe, Cr, Co, Cu, Zr, Nb, Mo and W), and has an SO4 content of 0.90% by weight or less, an Na content of 0.04% by weight or less, a BET specific surface area of from 40 m2/g to 70 m2/g (inclusive), and a value obtained by [(d90 -d10)/(average particle diameter)] of 0.90 or less, said value being an index indicating the expanse of the particle size distribution.
-
公开(公告)号：US09768316B2
公开(公告)日：2017-09-19
申请号：US14905008
申请日：2014-07-16
IPC分类号： H01L27/12 , H01L29/786 , C23C14/08 , H01L21/02 , C23C14/34
CPC分类号： H01L29/7869 , C23C14/08 , C23C14/3414 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/1285 , H01L29/66969 , H01L29/78696
摘要： Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a In2O3 phase having a bixbyite structure as the main crystal phase, and has a GaInO3 phase having a β-Ga2O3-type structure, or a GaInO3 phase having a β-Ga2O3-type structure and a (Ga, In)2O3 phase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed.
-
10.发明授权公开(公告)号：US09732004B2
公开(公告)日：2017-08-15
申请号：US15303864
申请日：2015-04-15
IPC分类号： C04B35/45 , C04B35/00 , C23C14/08 , C23C14/34 , C04B35/622 , C23C14/58 , H01J37/34 , H01L21/02 , H01L29/04 , H01L29/66 , H01L29/786
CPC分类号： C04B35/45 , C04B35/00 , C04B35/01 , C04B35/62218 , C04B35/6261 , C04B2235/3281 , C04B2235/3282 , C04B2235/3286 , C04B2235/5436 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6585 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C23C14/0036 , C23C14/08 , C23C14/086 , C23C14/087 , C23C14/34 , C23C14/3414 , C23C14/5806 , H01J37/3429 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/02667 , H01L29/04 , H01L29/6675 , H01L29/78693
摘要： Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2 V−1 sec−1 or higher.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.02 秒)
