发明授权
US09548096B1 Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods
有权
使用共享源线的反向补充磁隧道结(MTJ)位单元及相关方法
- 专利标题: Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods
- 专利标题(中): 使用共享源线的反向补充磁隧道结(MTJ)位单元及相关方法
-
申请号: US14835871申请日: 2015-08-26
-
公开(公告)号: US09548096B1公开(公告)日: 2017-01-17
- 发明人: Xia Li , Yu Lu , Xiaochun Zhu
- 申请人: QUALCOMM Incorporated
- 代理机构: Withrow & Terranova, PLLC
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/16
摘要:
Reverse complement MTJ bit cells employing shared source lines are disclosed. In one aspect, a 2T2MTJ reverse complement bit cell employing shared source line is provided. Bit cell includes first MTJ and second MTJ. Value of first MTJ is complement of value of second MTJ. First bit line is coupled to top layer of first MTJ, and first electrode of first access transistor is coupled to bottom layer of first MTJ. Second bit line is coupled to bottom layer of second MTJ, and first electrode of second access transistor is coupled to top layer of second MTJ. Word line is coupled to second electrode of first access transistor and second access transistor. Shared source line is coupled to third electrode of first access transistor and second access transistor. Employing shared source line allows the bit cell to be designed with reduced parasitic resistance.
公开/授权文献
信息查询