Invention Grant
US09548220B2 Method of fabricating semiconductor package having an interposer structure
有权
具有中介层结构的半导体封装的制造方法
- Patent Title: Method of fabricating semiconductor package having an interposer structure
- Patent Title (中): 具有中介层结构的半导体封装的制造方法
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Application No.: US14986903Application Date: 2016-01-04
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Publication No.: US09548220B2Publication Date: 2017-01-17
- Inventor: Kuan-Wei Chuang , Chun-Tang Lin , Yi-Chian Liao , Yi-Che Lai
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101132953A 20120910
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/58 ; H01L23/498 ; H01L21/78 ; H01L23/00 ; H01L23/14 ; H01L21/311 ; H01L21/56 ; H01L21/683 ; H01L25/00
Abstract:
A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.
Public/Granted literature
- US20160118271A1 METHOD OF FABRICATING SEMICONDUCTOR PACKAGE HAVING AN INTERPOSER STRUCTURE Public/Granted day:2016-04-28
Information query
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