Invention Grant
US09548238B2 Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same
有权
使用自对准OPL替换接触和图案化HSQ的半导体器件的制造方法以及由其形成的半导体器件
- Patent Title: Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same
- Patent Title (中): 使用自对准OPL替换接触和图案化HSQ的半导体器件的制造方法以及由其形成的半导体器件
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Application No.: US13964286Application Date: 2013-08-12
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Publication No.: US09548238B2Publication Date: 2017-01-17
- Inventor: Szu-Lin Cheng , Jack O. Chu , Isaac Lauer , Jeng-Bang Yau
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully Scott Murphy and Presser
- Agent Frank Digiglio
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
A method for manufacturing a semiconductor device, comprises forming an organic planarization layer on a plurality of gates on a substrate, wherein the plurality of gates each include a spacer layer thereon, forming an oxide layer on the organic planarization layer, removing a portion of the oxide layer to expose the organic planarization layer, stripping the organic planarization layer to form a cavity, patterning a direct lithographically-patternable gap dielectric on at least one of the gates in the cavity, and depositing a conductive contact in a remaining portion of the cavity.
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