Invention Grant
US09548240B2 Semiconductor device and method of forming repassivation layer for robust low cost fan-out semiconductor package
有权
半导体器件和形成再钝化层的方法，用于坚固的低成本扇出半导体封装
- Patent Title: Semiconductor device and method of forming repassivation layer for robust low cost fan-out semiconductor package
- Patent Title (中): 半导体器件和形成再钝化层的方法，用于坚固的低成本扇出半导体封装
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Application No.: US14616942Application Date: 2015-02-09
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Publication No.: US09548240B2Publication Date: 2017-01-17
- Inventor: Yaojian Lin , Kang Chen , Jianmin Fang , Xia Feng
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L23/31 ; H01L23/498 ; H01L21/56 ; H01L23/538
Abstract:
A semiconductor device comprises a semiconductor die including a conductive layer. A first insulating layer is formed over the semiconductor die and conductive layer. An encapsulant is disposed over the semiconductor die. A compliant island is formed over the first insulating layer. An interconnect structure is formed over the compliant island. An under bump metalization (UBM) is formed over the compliant island. The compliant island includes a diameter greater than 5 μm larger than a diameter of the UBM. An opening is formed in the compliant island over the conductive layer. A second insulating layer is formed over the first insulating layer and compliant island. A third insulating layer is formed over an interface between the semiconductor die and the encapsulant. An opening is formed in the third insulating layer over the encapsulant for stress relief.
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