Invention Grant
US09548249B2 Methods of performing fin cut etch processes for FinFET semiconductor devices and the resulting devices
有权
对FinFET半导体器件和所产生的器件执行鳍片切割蚀刻工艺的方法
- Patent Title: Methods of performing fin cut etch processes for FinFET semiconductor devices and the resulting devices
- Patent Title (中): 对FinFET半导体器件和所产生的器件执行鳍片切割蚀刻工艺的方法
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Application No.: US14633544Application Date: 2015-02-27
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Publication No.: US09548249B2Publication Date: 2017-01-17
- Inventor: Min Gyu Sung , Catherine B. Labelle
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/762 ; H01L21/308
Abstract:
A method includes forming a plurality of fins above a substrate. A first mask layer is formed above a first subset of the fins. First portions of the fins in the first subset exposed by a first opening in the first mask layer are removed to define, for each of the fins, a first fin segment and a second fin segment, each having a cut end surface. A first liner layer is formed on at least the cut end surface of the first fin segment for each of the fins in the first subset. A second mask layer having a second opening is formed above a second subset of the plurality of fins. An etching process removes second portions of the second subset of fins exposed by the second opening. The first liner layer protects the cut end surface of at least the first fin segment during the removing.
Public/Granted literature
- US20160254192A1 METHODS OF PERFORMING FIN CUT ETCH PROCESSES FOR FINFET SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES Public/Granted day:2016-09-01
Information query
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