公开(公告)号：US09837268B2

公开(公告)日：2017-12-05

申请号：US15154444

申请日：2016-05-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yi Qi ,  Xunyuan Zhang ,  Catherine B. Labelle

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/02532 ,  H01L21/02639 ,  H01L21/311 ,  H01L21/31144 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of fabricating raised fin structures is provided, the fabricating including: providing a substrate and at least one dielectric layer over the substrate; forming a trench in the at least one dielectric layer, the trench having a lower portion, a lateral portion, and an upper portion, the upper portion being at least partially laterally offset from the lower portion and being joined to the lower portion by the lateral portion; and, growing a material in the trench to form the raised fin structure, wherein the trench is formed to ensure that any growth defect in the lower portion of the trench terminates either in the lower portion or the lateral portion of the trench and does not extend into the upper portion of the trench.

公开(公告)号：US20160351411A1

公开(公告)日：2016-12-01

申请号：US14726712

申请日：2015-06-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Min Gyu Sung ,  Catherine B. Labelle

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/3083

Abstract: One illustrative method disclosed herein includes, among other things, forming a fin-removal masking layer comprised of a plurality of line-type features, each of which is positioned above one of the fins, and a masking material positioned at least between adjacent features of the fin-removal masking layer and above portions of an insulating material in the trenches between the fins. The method also includes performing an anisotropic etching process through the fin-removal masking layer to remove the portions of the fins to be removed.

Abstract translation: 本文公开的一种说明性方法除其他外包括形成由多个线型特征组成的鳍去除掩模层，每个线型特征位于其中一个翅片上方，并且掩蔽材料至少位于相邻特征之间 翅片去除掩模层和鳍片之间的沟槽中的绝缘材料的上述部分。 该方法还包括通过散热器去除掩模层进行各向异性蚀刻工艺，以除去待除去的散热片的部分。

公开(公告)号：US09875905B2

公开(公告)日：2018-01-23

申请号：US14920179

申请日：2015-10-22

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Min Gyu Sung ,  Ruilong Xie ,  Catherine B. Labelle

IPC: H01L21/308 ,  H01L29/78 ,  H01L29/66 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/06

CPC classification number: H01L21/3081 ,  H01L21/31053 ,  H01L21/31127 ,  H01L21/31144 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: FinFET devices and methods of fabricating a FinFET device are provided. An exemplary method of fabricating a FinFET device includes providing a semiconductor substrate with a plurality of fins and a multi-layered hardmask stack formed thereover. The multi-layered hardmask stack is patterned to form a patterned multi-layered hardmask stack having a tapered fin masking configuration with a shortened region and an elongated region. A region of fins adjacent to the shortened region is masked with a second mask. The region of fins masked with the second mask is free from the patterned multi-layered hardmask stack. Fins in unmasked areas are etched after forming the second mask. The second mask is removed with at least one layer of the patterned multi-layered hardmask stack remaining after etching the fins in the unmasked areas. End portions of the fins adjacent to the shortened region are etched after removing the second mask.

公开(公告)号：US20170117156A1

公开(公告)日：2017-04-27

申请号：US14920179

申请日：2015-10-22

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Min Gyu Sung ,  Ruilong Xie ,  Catherine B. Labelle

IPC: H01L21/308 ,  H01L29/06 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/3081 ,  H01L21/31053 ,  H01L21/31127 ,  H01L21/31144 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: FinFET devices and methods of fabricating a FinFET device are provided. An exemplary method of fabricating a FinFET device includes providing a semiconductor substrate with a plurality of fins and a multi-layered hardmask stack formed thereover. The multi-layered hardmask stack is patterned to form a patterned multi-layered hardmask stack having a tapered fin masking configuration with a shortened region and an elongated region. A region of fins adjacent to the shortened region is masked with a second mask. The region of fins masked with the second mask is free from the patterned multi-layered hardmask stack. Fins in unmasked areas are etched after forming the second mask. The second mask is removed with at least one layer of the patterned multi-layered hardmask stack remaining after etching the fins in the unmasked areas. End portions of the fins adjacent to the shortened region are etched after removing the second mask.

公开(公告)号：US20160254192A1

公开(公告)日：2016-09-01

申请号：US14633544

申请日：2015-02-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Min Gyu Sung ,  Catherine B. Labelle

IPC: H01L21/8234 ,  H01L21/311 ,  H01L21/762 ,  H01L21/308

CPC classification number: H01L21/823431 ,  H01L21/3083 ,  H01L21/76224 ,  H01L21/823481

Abstract: A method includes forming a plurality of fins above a substrate. A first mask layer is formed above a first subset of the fins. First portions of the fins in the first subset exposed by a first opening in the first mask layer are removed to define, for each of the fins, a first fin segment and a second fin segment, each having a cut end surface. A first liner layer is formed on at least the cut end surface of the first fin segment for each of the fins in the first subset. A second mask layer having a second opening is formed above a second subset of the plurality of fins. An etching process removes second portions of the second subset of fins exposed by the second opening. The first liner layer protects the cut end surface of at least the first fin segment during the removing.

Abstract translation: 一种方法包括在衬底上形成多个翅片。 第一掩模层形成在翅片的第一子集上方。 移除在第一掩模层中由第一开口暴露的第一子集中的翅片的第一部分，以为每个翅片限定每个具有切割端面的第一翅片段和第二翅片段。 在第一子集中的每个鳍​​片的至少第一鳍片段的切割端表面上形成第一衬里层。 具有第二开口的第二掩模层形成在多个翅片的第二子集之上。 蚀刻工艺除去由第二开口暴露的第二翅片子集的第二部分。 在移除期间，第一衬里层保护至少第一鳍段的切割端表面。

公开(公告)号：US09761495B1

公开(公告)日：2017-09-12

申请号：US15050540

申请日：2016-02-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Min Gyu Sung ,  Catherine B. Labelle ,  Chanro Park ,  Hoon Kim

IPC: H01L21/8234 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L21/308 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/66545

Abstract: A method includes forming a plurality of fins above a substrate. A plurality of gate structures is formed above the plurality of fins. A first mask layer is formed above the plurality of fins and the plurality of gate structures. The first mask layer has at least one fin cut opening and at least one gate cut opening defined therein. A first portion of a first fin of the plurality of fins disposed below the fin cut opening is removed to define a fin cut cavity. A second portion of a first gate structure of the plurality of gate structures disposed below the gate cut opening is removed to define a gate cut cavity. An insulating material layer is concurrently formed in at least a portion of the fin cut cavity and the gate cut cavity.

公开(公告)号：US09911619B1

公开(公告)日：2018-03-06

申请号：US15291446

申请日：2016-10-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Hoon Kim ,  Catherine B. Labelle ,  Lars W. Liebmann ,  Chanro Park ,  Min Gyu Sung

IPC: H01L21/308 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L29/66795

Abstract: Methods for a lithographic process used to pattern fins for fin-type field-effect transistors (FinFETs). A first plurality of hardmask sections may be formed, and sacrificial spacers may be formed on vertical sidewalls of the first plurality of hardmask sections. Each of the first plurality of hardmask sections is comprised of a first material. Gaps between the sacrificial spacers are filled with a second material, which is selected to etch selectively to the first material, in order to define a second plurality of hardmask sections each comprised of the second material.

公开(公告)号：US09779960B2

公开(公告)日：2017-10-03

申请号：US14726712

申请日：2015-06-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Min Gyu Sung ,  Catherine B. Labelle

IPC: H01L21/311 ,  B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/308

CPC classification number: H01L21/3086 ,  H01L21/3083

Abstract: One illustrative method disclosed herein includes, among other things, forming a fin-removal masking layer comprised of a plurality of line-type features, each of which is positioned above one of the fins, and a masking material positioned at least between adjacent features of the fin-removal masking layer and above portions of an insulating material in the trenches between the fins. The method also includes performing an anisotropic etching process through the fin-removal masking layer to remove the portions of the fins to be removed.

公开(公告)号：US09548249B2

公开(公告)日：2017-01-17

申请号：US14633544

申请日：2015-02-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Min Gyu Sung ,  Catherine B. Labelle

IPC: H01L21/8234 ,  H01L21/762 ,  H01L21/308

CPC classification number: H01L21/823431 ,  H01L21/3083 ,  H01L21/76224 ,  H01L21/823481

Abstract: A method includes forming a plurality of fins above a substrate. A first mask layer is formed above a first subset of the fins. First portions of the fins in the first subset exposed by a first opening in the first mask layer are removed to define, for each of the fins, a first fin segment and a second fin segment, each having a cut end surface. A first liner layer is formed on at least the cut end surface of the first fin segment for each of the fins in the first subset. A second mask layer having a second opening is formed above a second subset of the plurality of fins. An etching process removes second portions of the second subset of fins exposed by the second opening. The first liner layer protects the cut end surface of at least the first fin segment during the removing.

Abstract translation: 一种方法包括在衬底上形成多个翅片。 第一掩模层形成在翅片的第一子集上方。 移除在第一掩模层中由第一开口暴露的第一子集中的翅片的第一部分，以为每个翅片限定每个具有切割端面的第一翅片段和第二翅片段。 在第一子集中的每个鳍​​片的至少第一鳍片段的切割端表面上形成第一衬里层。 具有第二开口的第二掩模层形成在多个翅片的第二子集之上。 蚀刻工艺除去由第二开口暴露的第二翅片子集的第二部分。 在移除期间，第一衬里层保护至少第一鳍段的切割端表面。

公开(公告)号：US20170243790A1

公开(公告)日：2017-08-24

申请号：US15050540

申请日：2016-02-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Min Gyu Sung ,  Catherine B. Labelle ,  Chanro Park ,  Hoon Kim

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L21/308 ,  H01L21/3105

CPC classification number: H01L21/823431 ,  H01L21/308 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/66545

Abstract: A method includes forming a plurality of fins above a substrate. A plurality of gate structures is formed above the plurality of fins. A first mask layer is formed above the plurality of fins and the plurality of gate structures. The first mask layer has at least one fin cut opening and at least one gate cut opening defined therein. A first portion of a first fin of the plurality of fins disposed below the fin cut opening is removed to define a fin cut cavity. A second portion of a first gate structure of the plurality of gate structures disposed below the gate cut opening is removed to define a gate cut cavity. An insulating material layer is concurrently formed in at least a portion of the fin cut cavity and the gate cut cavity.