发明授权
- 专利标题： Metal contact for semiconductor device
- 专利标题（中）： 半导体器件的金属接触
-
申请号： US14440872申请日： 2013-10-30
-
公开(公告)号： US09548282B2公开(公告)日： 2017-01-17
- 发明人: Chang-Ming Lin , Lei Shi , Yujuan Tao
- 申请人： NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- 申请人地址： CN Nantong, Jiangsu
- 专利权人： NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- 当前专利权人： NANTONG FUJITSU MICROELECTRONICS CO., LTD.
- 当前专利权人地址： CN Nantong, Jiangsu
- 代理机构： RatnerPrestia
- 优先权： CN201210444471 20121108; CN201210444474 20121108
- 国际申请： PCT/CN2013/086214 WO 20131030
- 国际公布： WO2014/071815 WO 20140515
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/31
摘要：
A semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate (300) provided with a plurality of pads (301), columnar electrodes on the pads (301) and a solder ball (321) provided on the columnar electrode. The columnar electrode comprises a main body (307) and a groove in the main body (307), and an opening of the groove is overlapped with the top surface of the columnar electrode. The solder ball (321) comprises a metal bump (320) arranged on the top of the columnar electrode and a filling part (319) filled in the groove. The solder ball and the columnar electrode form a structure similar to a bolt; thus the binding force between the solder ball and the columnar electrode is improved.
公开/授权文献
- US20150287688A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2015-10-08
信息查询
IPC分类:
