Invention Grant
- Patent Title: Heterogeneous semiconductor material integration techniques
- Patent Title (中): 非均质半导体材料集成技术
-
Application No.: US14930171Application Date: 2015-11-02
-
Publication No.: US09548320B2Publication Date: 2017-01-17
- Inventor: Alejandro X. Levander , Kimin Jun
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Finch & Maloney PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L21/762 ; H01L21/265 ; H01L21/02 ; H01L21/3105 ; H01L21/311 ; H01L29/06 ; H01L29/26

Abstract:
Techniques are disclosed for heteroepitaxial growth of a layer of lattice-mismatched semiconductor material on an initial substrate, and transfer of a defect-free portion of that layer to a handle wafer or other suitable substrate for integration. In accordance with some embodiments, transfer may result in the presence of island-like oxide structures on the handle wafer/substrate, each having a defect-free island of the lattice-mismatched semiconductor material embedded within its upper surface. Each defect-free semiconductor island may have one or more crystalline faceted edges and, with its accompanying oxide structure, may provide a planar surface for integration. In some cases, a layer of a second, different semiconductor material may be heteroepitaxially grown over the handle wafer/substrate to fill areas around the transferred islands. In some other cases, the handle wafer/substrate itself may be homoepitaxially grown to fill areas around the transferred islands.
Public/Granted literature
- US20160056180A1 HETEROGENEOUS SEMICONDUCTOR MATERIAL INTEGRATION TECHNIQUES Public/Granted day:2016-02-25
Information query
IPC分类: