Invention Grant
US09548335B2 Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines
有权
与具有单独选择线的电阻式存储单元阵列相关联的装置和操作方法
- Patent Title: Apparatuses and operation methods associated with resistive memory cell arrays with separate select lines
- Patent Title (中): 与具有单独选择线的电阻式存储单元阵列相关联的装置和操作方法
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Application No.: US15171890Application Date: 2016-06-02
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Publication No.: US09548335B2Publication Date: 2017-01-17
- Inventor: Zengtao T. Liu , Kirk D. Prall , Mike Violette
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/24 ; G11C13/00 ; H01L45/00 ; H01L43/08 ; H01L43/10 ; H01L27/22
Abstract:
The present disclosure includes methods and apparatuses that include resistive memory. A number of embodiments include a first memory cell coupled to a data line and including a first resistive storage element and a first access device, a second memory cell coupled to the data line and including a second resistive storage element and a second access device, an isolation device formed between the first access device and the second access device, a first select line coupled to the first resistive storage element, and a second select line coupled to the second resistive storage element, wherein the second select line is separate from the first select line.
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