发明授权
US09548353B2 Wide band-gap semiconductor device including schotky electrode and method for producing same
有权
包括schotky电极的宽带隙半导体器件及其制造方法
- 专利标题： Wide band-gap semiconductor device including schotky electrode and method for producing same
- 专利标题（中）： 包括schotky电极的宽带隙半导体器件及其制造方法
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申请号： US14792991申请日： 2015-07-07
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公开(公告)号： US09548353B2公开(公告)日： 2017-01-17
- 发明人: Masatoshi Aketa , Yuta Yokotsuji
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2011-111129 20110518; JP2011-138400 20110622
- 主分类号： H01L27/095
- IPC分类号： H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L31/108 ; H01L29/06 ; H01L29/16 ; H01L29/872 ; H01L21/04 ; H01L21/265 ; H01L29/20 ; H01L29/66 ; H01L29/08 ; H01L29/36
摘要：
A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.
公开/授权文献
- US20150311278A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 公开/授权日：2015-10-29
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