发明授权
- 专利标题： High mobility devices with anti-punch through layers and methods of forming same
- 专利标题（中）： 具有抗冲穿层的高移动性设备及其形成方法
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申请号： US14555128申请日： 2014-11-26
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公开(公告)号： US09548362B2公开(公告)日： 2017-01-17
- 发明人: Kuo-Cheng Ching , Ka-Hing Fung , Zhiqiang Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/10 ; H01L27/088 ; H01L21/8234 ; H01L29/66
摘要：
An embodiment semiconductor device includes a fin extending upwards from a semiconductor substrate. The fin includes an anti-punch through (APT) layer having APT dopants and a channel region over the APT layer. The channel region is substantially free of APT dopants. The semiconductor device further includes a conductive gate stack on a sidewall and a top surface of the channel region.
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