Invention Grant
- Patent Title: Semiconductor device including subword driver circuit
- Patent Title (中): 半导体器件包括子字驱动电路
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Application No.: US14642411Application Date: 2015-03-09
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Publication No.: US09552866B2Publication Date: 2017-01-24
- Inventor: Noriaki Mochida
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2014-046021 20140310
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/14 ; G11C8/00 ; G11C11/408 ; G11C11/4097 ; G11C8/08
Abstract:
The present invention is provided with: subword drivers SWD for driving subword lines SWL, a selection circuit for supplying either negative potential VKK1 or VKK2 to the subword drivers SWD, and memory cells MC that are selected in the case when the subword line SWL is set to an active potential VPP and are not selected in the case when the subword line SWL is either a negative potential VKK1 or VKK2.
Public/Granted literature
- US20150255146A1 SEMICONDUCTOR DEVICE INCLUDING SUBWORD DRIVER CIRCUIT Public/Granted day:2015-09-10
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