Invention Grant
US09552879B2 Nonvolatile memory device having variable resistance memory cells and a method of resetting by initially performing pre-read or strong set operation
有权
具有可变电阻存储单元的非易失性存储器件和通过初始执行预读或强设置操作来复位的方法
- Patent Title: Nonvolatile memory device having variable resistance memory cells and a method of resetting by initially performing pre-read or strong set operation
- Patent Title (中): 具有可变电阻存储单元的非易失性存储器件和通过初始执行预读或强设置操作来复位的方法
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Application No.: US14505523Application Date: 2014-10-03
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Publication No.: US09552879B2Publication Date: 2017-01-24
- Inventor: Yongkyu Lee , Yeongtaek Lee , Youngbae Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0020615 20140221
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56
Abstract:
A method of resetting a variable resistance memory cell in a nonvolatile memory device includes; programming the memory cell to a set state using a corresponding compliance current, and then programming the memory cell to a reset state by pre-reading the variable resistance memory cell to determine its resistance and resetting the memory cell using a variable reset voltage determined in response to the determined resistance.
Public/Granted literature
- US20150243353A1 NONVOLATILE MEMORY DEVICE HAVING VARIABLE RESISTANCE MEMORY CELLS AND A METHOD OF RESETTING SAME Public/Granted day:2015-08-27
Information query
