Invention Grant
US09552887B2 Semiconductor memory systems using regression analysis and read methods thereof
有权
使用回归分析及其读取方法的半导体存储器系统
- Patent Title: Semiconductor memory systems using regression analysis and read methods thereof
- Patent Title (中): 使用回归分析及其读取方法的半导体存储器系统
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Application No.: US14811222Application Date: 2015-07-28
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Publication No.: US09552887B2Publication Date: 2017-01-24
- Inventor: Kwanghoon Kim , Jun Jin Kong , Changkyu Seol , Hong Rak Son
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0119106 20121025
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C11/56 ; G11C16/34 ; G11C16/10
Abstract:
A memory system includes: a bit counter and a regression analyzer. The bit counter is configured to generate a plurality of count values based on data read from selected memory cells using a plurality of different read voltages, each of the plurality of count values being indicative of a number of memory cells of a memory device having threshold voltages between pairs of the plurality of different read voltages. The regression analyzer is configured to determine read voltage for the selected memory cells based on the plurality of count values using regression analysis.
Public/Granted literature
- US20150332778A1 SEMICONDUCTOR MEMORY SYSTEMS USING REGRESSION ANALYSIS AND READ METHODS THEREOF Public/Granted day:2015-11-19
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