发明授权
- 专利标题： Cyclic aluminum nitride deposition in a batch reactor
- 专利标题（中）： 在间歇式反应器中循环氮化铝沉积
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申请号： US13907718申请日： 2013-05-31
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公开(公告)号： US09552979B2公开(公告)日： 2017-01-24
- 发明人: Werner Knaepen , Bert Jongbloed , Dieter Pierreux , Peter Zagwijn , Hessel Sprey , Cornelius A. van der Jeugd , Marinus Josephus de Blank , Robin Roelofs , Qi Xie , Jan Willem Maes
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL
- 专利权人： ASM IP HOLDING B.V.
- 当前专利权人： ASM IP HOLDING B.V.
- 当前专利权人地址： NL
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31 ; H01L21/02 ; C23C16/30 ; C23C16/455 ; C23C16/458 ; H01L29/20
摘要：
A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.
公开/授权文献
- US20140357090A1 CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR 公开/授权日：2014-12-04
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