Process for forming silicon-filled openings with a reduced occurrence of voids
    2.
    发明授权
    Process for forming silicon-filled openings with a reduced occurrence of voids 有权
    用于形成具有减少的空隙发生的填充硅的开口的方法

    公开(公告)号:US09443730B2

    公开(公告)日:2016-09-13

    申请号:US14335446

    申请日:2014-07-18

    IPC分类号: H01L21/20 H01L21/02

    摘要: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.

    摘要翻译: 在一些实施例中,形成硅填充开口,其在硅填充物中没有或少量出现空隙,同时保持光滑的暴露的硅表面。 在一些实施例中,衬底中的开口可以填充有硅,例如非晶硅。 沉积的硅可能具有内部空隙。 然后将沉积的硅暴露于硅迁移率抑制剂,例如含氧物质和/或半导体掺杂剂。 沉积的硅填充物随后退火。 在退火之后,空隙的尺寸可以减小,并且在一些实施例中,尺寸的这种减小可以发生到消除空隙的程度。

    METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE
    3.
    发明申请
    METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE 审中-公开
    用过氧化氢氧化半导体衬底形成氧化层的方法

    公开(公告)号:US20160240373A1

    公开(公告)日:2016-08-18

    申请号:US14621174

    申请日:2015-02-12

    IPC分类号: H01L21/02

    摘要: In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.

    摘要翻译: 在一些实施例中,通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底,在半导体衬底上生长氧化物层。 暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。 当衬底是锗衬底时,虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗,但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层 例如约6.27g / cm 3)。 在一些实施例中,另一层材料直接沉积在氧化物层上。 例如,介电层可以直接沉积在氧化物层上。

    REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES
    5.
    发明申请
    REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES 审中-公开
    半导体衬底的反应固化过程

    公开(公告)号:US20170011910A1

    公开(公告)日:2017-01-12

    申请号:US15240141

    申请日:2016-08-18

    IPC分类号: H01L21/02 C23C16/40 C23C16/56

    摘要: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

    摘要翻译: 在一些实施方案中,反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中,其中处理室中的压力为约300托或更小。 在一些实施方案中,过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料,并且可以提供高度均匀的固化结果,例如在批处理室中固化的一批半导体衬底。

    Reactive curing process for semiconductor substrates
    6.
    发明授权
    Reactive curing process for semiconductor substrates 有权
    半导体衬底的反应固化工艺

    公开(公告)号:US09431238B2

    公开(公告)日:2016-08-30

    申请号:US14718517

    申请日:2015-05-21

    IPC分类号: H01L21/02

    摘要: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

    摘要翻译: 在一些实施方案中,反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中,其中处理室中的压力为约300托或更小。 在一些实施方案中,过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料,并且可以提供高度均匀的固化结果,例如在批处理室中固化的一批半导体衬底。

    REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES
    7.
    发明申请
    REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES 有权
    半导体基板的反应固化过程

    公开(公告)号:US20150357184A1

    公开(公告)日:2015-12-10

    申请号:US14718517

    申请日:2015-05-21

    IPC分类号: H01L21/02

    摘要: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

    摘要翻译: 在一些实施方案中,反应性固化方法可以通过将处理室中的半导体衬底暴露于含有过氧化氢的环境中,其中处理室中的压力为约300托或更小。 在一些实施方案中,过氧化氢分子在处理室中的停留时间为约5分钟或更短。 固化过程温度可以设定在约500℃或更低。 固化过程可用于固化可流动介电材料,并且可以提供高度均匀的固化结果,例如在批处理室中固化的一批半导体衬底。

    CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR
    8.
    发明申请
    CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR 有权
    循环反应器中的氮化铝沉淀

    公开(公告)号:US20140357090A1

    公开(公告)日:2014-12-04

    申请号:US13907718

    申请日:2013-05-31

    IPC分类号: H01L21/02

    摘要: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

    摘要翻译: 公开了一种沉积氮化铝的方法。 该方法包括在间歇处理室中提供多个半导体衬底,并且通过在沉积循环期间不使衬底暴露于等离子体,通过执行多个沉积循环在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室,从分批处理室中除去铝前体,以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室,并且沉积可以在小于1托的沉积压力下进行。