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    METHOD FOR FORMING A LAYER PROVIDED WITH SILICON
    2.
    发明申请
    METHOD FOR FORMING A LAYER PROVIDED WITH SILICON 有权

    公开(公告)号：US20210407789A1

    公开(公告)日：2021-12-30

    申请号：US17352555

    申请日：2021-06-21

    申请人： ASM IP Holding B.V.

    发明人： Dieter Pierreux ,  Steven van Aerde ,  Bert Jongbloed ,  Kelly Houben ,  Werner Knaepen ,  Wilco Verweij

    IPC分类号： H01L21/02 ,  H01L27/11582

    摘要： A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

    METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE
    7.
    发明申请
    METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE 审中-公开
    用过氧化氢氧化半导体衬底形成氧化层的方法

    公开(公告)号：US20160240373A1

    公开(公告)日：2016-08-18

    申请号：US14621174

    申请日：2015-02-12

    申请人： ASM IP Holding B.V.

    发明人： Fu Tang ,  Michael Givens ,  Qi Xie ,  Jan Willem Maes ,  Bert Jongbloed ,  Radko G. Bankras ,  Theodorus G.M. Oosterlaken ,  Dieter Pierreux ,  Werner Knaepen ,  Harald B. Profijt ,  Cornelius A. van der Jeugd

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02236 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02238

    摘要： In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.

    摘要翻译： 在一些实施例中，通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底，在半导体衬底上生长氧化物层。 暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。 当衬底是锗衬底时，虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗，但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层 例如约6.27g / cm 3）。 在一些实施例中，另一层材料直接沉积在氧化物层上。 例如，介电层可以直接沉积在氧化物层上。

    CYCLIC ALUMINUM OXYNITRIDE DEPOSITION
    8.
    发明申请
    CYCLIC ALUMINUM OXYNITRIDE DEPOSITION 有权
    循环氧化铝沉积

    公开(公告)号：US20160148805A1

    公开(公告)日：2016-05-26

    申请号：US14555429

    申请日：2014-11-26

    申请人： ASM IP Holding B.V.

    发明人： Bert Jongbloed ,  Dieter Pierreux ,  Werner Knaepen

    IPC分类号： H01L21/02 ,  H01L21/308

    CPC分类号： H01L21/02178 ,  H01L21/0228

    摘要： A process for depositing aluminum oxynitride (AlON) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to an oxygen precursor to form AlON. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to an oxygen precursor together constitute an AlON deposition cycle. A plurality of AlON deposition cycles may be performed to deposit an AlON film of a desired thickness. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.

    摘要翻译： 公开了一种沉积氮氧化铝（AlON）的方法。 该方法包括使基底经历时间上分离的暴露于铝前体和氮前体，以在基底上形成含铝和氮的化合物。 随后将铝和含氮化合物暴露于氧前体以形成AlON。 时间上分离的暴露于铝前体和氮前体，随后暴露于氧前体一起构成了AlON沉积循环。 可以执行多个AlON沉积循环以沉积所需厚度的AlON膜。 沉积可以在间歇处理室中进行，其可以容纳25个或更多个基底的批次。 可以在不暴露于等离子体的情况下进行沉积。