Invention Grant
US09552986B2 Forming a memory device using sputtering to deposit silver-selenide film 有权
使用溅射形成存储器件以沉积硒化银膜

Forming a memory device using sputtering to deposit silver-selenide film
Abstract:
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
Information query
Patent Agency Ranking
0/0