Invention Grant
- Patent Title: Forming a memory device using sputtering to deposit silver-selenide film
- Patent Title (中): 使用溅射形成存储器件以沉积硒化银膜
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Application No.: US14253649Application Date: 2014-04-15
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Publication No.: US09552986B2Publication Date: 2017-01-24
- Inventor: Jiutao Li , Keith Hampton , Allen McTeer
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C14/06 ; C23C14/00 ; C23C14/34 ; C23C14/54

Abstract:
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
Public/Granted literature
- US20140224646A1 SILVER SELENIDE FILM STOICHIOMETRY AND MORPHOLOGY CONTROL IN SPUTTER DEPOSITION Public/Granted day:2014-08-14
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