公开(公告)号：US20140224646A1

公开(公告)日：2014-08-14

申请号：US14253649

申请日：2014-04-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC: C23C14/06

CPC classification number: H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

Abstract: A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

Abstract translation: 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括使用溅射沉积工艺在约0.3mTorr至约10mTorr的压力下沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

公开(公告)号：US20150001673A1

公开(公告)日：2015-01-01

申请号：US14324945

申请日：2014-07-07

Applicant: Micron Technology, Inc.

Inventor： Jiutao Li ,  Shuang Meng

IPC: C04B35/48 ,  H01L49/02

CPC classification number: H01L21/02181 ,  C04B35/48 ,  H01L21/02189 ,  H01L21/02332 ,  H01L21/31155 ,  H01L21/3143 ,  H01L21/31691 ,  H01L28/40

Abstract: A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.

Abstract translation: 过渡金属氧化物电介质材料掺杂有非金属，以增强金属氧化物的电性能。 在优选实施例中，过渡金属氧化物沉积在底部电极上并注入掺杂剂。 在优选的实施方案中，金属氧化物是氧化铪或氧化锆，掺杂剂是氮。 掺杂剂可将氧化铪或氧化锆的晶体结构转变为四方结构，并增加金属氧化物的介电常数。

公开(公告)号：US09552986B2

公开(公告)日：2017-01-24

申请号：US14253649

申请日：2014-04-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC: H01L21/02 ,  C23C14/06 ,  C23C14/00 ,  C23C14/34 ,  C23C14/54

CPC classification number: H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

Abstract: A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

Abstract translation: 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括在约0.3mTorr至约10mTorr的压力下使用溅射沉积工艺沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

公开(公告)号：US08821697B2

公开(公告)日：2014-09-02

申请号：US13727121

申请日：2012-12-26

Applicant: Micron Technology, Inc.

Inventor： Jiutao Li ,  Allen McTeer

IPC: C23C14/34

CPC classification number: C23C14/3492 ,  C23C14/0623

Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C. during sputter deposition, and heating the sputter deposition substrate to greater than about 30° C.

Abstract translation: 提供了用于溅射沉积硒化银并控制溅射沉积的硒化银膜上及其上的缺陷形成的方法和装置。 还提供了形成包含α相和β相的沉积的硒化银的方法。 所述方法包括使用小于约200W的溅射功率，使用小于约1W / cm 2的溅射功率密度，使用小于约40mTorr，优选小于约10mTorr的溅射压力沉积硒化银，使用溅射气体与 使用具有至少大于2.5加仑/分钟的冷却剂流速和小于约25℃的冷却剂温度的冷却装置，使用磁控管溅射系统，该磁控溅射系统具有放置在距离 硒化银溅射靶，以便在溅射沉积期间将溅射靶温度保持在小于约350℃，优选低于约250℃，并将溅射沉积衬底加热至大约30℃。

公开(公告)号：US20130118894A1

公开(公告)日：2013-05-16

申请号：US13727121

申请日：2012-12-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jiutao Li ,  Allen McTeer

IPC: C23C14/34

CPC classification number: C23C14/3492 ,  C23C14/0623

Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C. during sputter deposition, and heating the sputter deposition substrate to greater than about 30° C.

Abstract translation: 提供了用于溅射沉积硒化银并控制溅射沉积的硒化银膜上及其上的缺陷形成的方法和装置。 还提供了形成包含α相和β相的沉积的硒化银的方法。 所述方法包括使用小于约200W的溅射功率，使用小于约1W / cm 2的溅射功率密度，使用小于约40mTorr，优选小于约10mTorr的溅射压力沉积硒化银，使用溅射气体与 使用具有至少大于2.5加仑/分钟的冷却剂流速和小于约25℃的冷却剂温度的冷却装置，使用磁控溅射系统，该磁控溅射系统具有放置在距离 硒化银溅射靶，以便在溅射沉积期间将溅射靶温度保持在小于约350℃，优选低于约250℃，并将溅射沉积衬底加热至大约30℃。