Invention Grant
- Patent Title: Semiconductor chip having tampering feature
- Patent Title (中): 具有篡改特性的半导体芯片
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Application No.: US14924696Application Date: 2015-10-27
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Publication No.: US09553056B1Publication Date: 2017-01-24
- Inventor: Ali Afzali-Ardakani , Joel P. de Souza , Bahman Hekmatshoartabari , Daniel M. Kuchta , Devendra K. Sadana
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: H01L31/101
- IPC: H01L31/101 ; H01L23/00 ; H01L31/112

Abstract:
Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.
Information query
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