发明授权
- 专利标题： Semiconductor element, semiconductor device and method for manufacturing semiconductor element
- 专利标题（中）： 半导体元件，半导体元件及半导体元件的制造方法
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申请号： US13885841申请日： 2011-04-18
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公开(公告)号： US09553063B2公开(公告)日： 2017-01-24
- 发明人: Kenji Ohtsu , Taku Kusunoki , Akira Yamada , Takeharu Kuroiwa , Masayoshi Tarutani
- 申请人： Yoshiji Ohtsu , Taku Kusunoki , Akira Yamada , Takeharu Kuroiwa , Masayoshi Tarutani
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-255802 20101116
- 国际申请： PCT/JP2011/059511 WO 20110418
- 国际公布： WO2012/066803 WO 20120524
- 主分类号： H01L23/488
- IPC分类号： H01L23/488 ; H01L23/00 ; H01L29/45 ; H01L23/482 ; H01L21/04 ; H01L29/16
摘要：
The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.