发明授权
- 专利标题： Semiconductor device and related fabrication methods
- 专利标题（中）： 半导体器件及相关制造方法
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申请号： US14567357申请日： 2014-12-11
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公开(公告)号： US09553187B2公开(公告)日： 2017-01-24
- 发明人: Weize Chen , Richard J. De Souza , Mazhar Ul Hoque , Patrice M. Parris
- 申请人： Weize Chen , Richard J. De Souza , Mazhar Ul Hoque , Patrice M. Parris
- 申请人地址： US TX Austin
- 专利权人： NXP USA, Inc.
- 当前专利权人： NXP USA, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L27/02 ; H01L21/28 ; H01L29/49
摘要：
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap.
公开/授权文献
- US20160172489A1 SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS 公开/授权日：2016-06-16
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