Invention Grant
- Patent Title: On-chip vertical three dimensional microstrip line with characteristic impedance tuning technique and design structures
- Patent Title (中): 具有特征阻抗调谐技术和设计结构的片上垂直三维微带线
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Application No.: US15097648Application Date: 2016-04-13
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Publication No.: US09553348B2Publication Date: 2017-01-24
- Inventor: Barbara S. Dewitt , Essam Mina , BM Farid Rahman , Guoan Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran, Cole & Calderon, P.C.
- Agent Bryan Bortnick; Andrew M. Calderon
- Main IPC: H01P3/08
- IPC: H01P3/08 ; H01P5/04 ; G06F17/50 ; H01L23/66 ; H01P11/00 ; H01L23/522 ; H01L21/768 ; H01P1/203 ; H01P5/12 ; H03H7/38
Abstract:
A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.
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