Invention Grant
- Patent Title: Base-catalyzed silylation of terminal alkyne C—H bonds
- Patent Title (中): 末端炔烃C-H键的碱催化甲硅烷基化
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Application No.: US14841964Application Date: 2015-09-01
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Publication No.: US09556206B2Publication Date: 2017-01-31
- Inventor: Anton Toutov , Kerry Betz , Brian M. Stoltz , Wenbo Liu , Robert H. Grubbs
- Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Baker & Hostetler LLP
- Main IPC: C07F7/08
- IPC: C07F7/08 ; C07J7/00 ; C07J1/00 ; C07J51/00

Abstract:
The present invention is directed to a mild, efficient, and general direct C(sp)-H bond silylation. Various embodiments includes methods, each method comprising or consisting essentially of contacting at least one organic substrate comprising a terminal alkynyl C—H bond, with a mixture of at least one organosilane and an alkali metal hydroxide, under conditions sufficient to form a silylated terminal alkynyl moiety. The methods are operable in the substantially absence of transition-metal compounds. The systems associated with these methods are also disclosed.
Public/Granted literature
- US20160060278A1 BASE-CATALYZED SILYLATION OF TERMINAL ALKYNE C-H BONDS Public/Granted day:2016-03-03
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