Invention Grant
- Patent Title: System and method for gas-phase sulfur passivation of a semiconductor surface
- Patent Title (中): 半导体表面气相硫钝化的系统和方法
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Application No.: US13941216Application Date: 2013-07-12
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Publication No.: US09558931B2Publication Date: 2017-01-31
- Inventor: Fu Tang , Michael Eugene Givens , Qi Xie , Petri Raisanen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/02 ; H01L21/67 ; H01L23/31 ; H01L23/29 ; H01L21/306
Abstract:
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.
Public/Granted literature
- US20140027884A1 SYSTEM AND METHOD FOR GAS-PHASE SULFUR PASSIVATION OF A SEMICONDUCTOR SURFACE Public/Granted day:2014-01-30
Information query
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