Invention Grant
US09558944B2 System, method and reticle for improved pattern quality in extreme ultraviolet (EUV) lithography and method for forming the reticle
有权
用于改善极紫外（EUV）光刻的图案质量的系统，方法和掩模版以及用于形成掩模版的方法
- Patent Title: System, method and reticle for improved pattern quality in extreme ultraviolet (EUV) lithography and method for forming the reticle
- Patent Title (中): 用于改善极紫外（EUV）光刻的图案质量的系统，方法和掩模版以及用于形成掩模版的方法
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Application No.: US14716917Application Date: 2015-05-20
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Publication No.: US09558944B2Publication Date: 2017-01-31
- Inventor: Chia-Hao Hsu , Chia-Chen Chen , Jui-Ching Wu , Shang-Chieh Chien , Chia-Jen Chen , Chia-Ching Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Duane Morris LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/54 ; H01L21/027 ; G03F1/00 ; G03F7/20
Abstract:
A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.
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