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公开(公告)号：US11994809B2
公开(公告)日：2024-05-28
申请号：US18337574
申请日：2023-06-20
发明人： Yu-Fu Lin , Shih-Chang Shih , Chia-Chen Chen
CPC分类号： G03F7/70858 , B01D53/0407 , B01D53/30 , C23C16/4412 , B01D2257/108 , B01D2257/553 , B01D2257/93 , B01D2258/0216
摘要： The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
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公开(公告)号：US20230333489A1
公开(公告)日：2023-10-19
申请号：US18337574
申请日：2023-06-20
发明人： Yu-Fu Lin , Shih-Chang Shih , Chia-Chen Chen
CPC分类号： G03F7/70858 , C23C16/4412 , B01D53/0407 , B01D53/30 , B01D2257/93 , B01D2258/0216 , B01D2257/108 , B01D2257/553
摘要： The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
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公开(公告)号：US10684559B2
公开(公告)日：2020-06-16
申请号：US15902528
申请日：2018-02-22
发明人： Yu-Fu Lin , Tung-Jung Chang , Chia-Chen Chen
摘要： An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.
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4.发明授权System, method and reticle for improved pattern quality in extreme ultraviolet (EUV) lithography and method for forming the reticle 有权用于改善极紫外（EUV）光刻的图案质量的系统，方法和掩模版以及用于形成掩模版的方法公开(公告)号：US09558944B2
公开(公告)日：2017-01-31
申请号：US14716917
申请日：2015-05-20
发明人： Chia-Hao Hsu , Chia-Chen Chen , Jui-Ching Wu , Shang-Chieh Chien , Chia-Jen Chen , Chia-Ching Huang
IPC分类号： G03F1/22 , G03F1/54 , H01L21/027 , G03F1/00 , G03F7/20
CPC分类号： H01L21/0274 , G03F1/14 , G03F1/22 , G03F1/24 , G03F7/70283
摘要： A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.
摘要翻译： 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。
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公开(公告)号：US20150069253A1
公开(公告)日：2015-03-12
申请号：US14022355
申请日：2013-09-10
CPC分类号： G01J1/429 , G02B5/0816 , G02B27/0068 , G02F1/21 , G02F1/29 , G02F2203/24
摘要： Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.
摘要翻译： 本公开的一些实施例涉及形成和操作反射表面以补偿对图案均匀性的像差影响的方法。 在一些实施例中，反射表面包括EUV照明工具的还原光学器件内的反射镜。 在一些实施例中，反射表面包括反射光罩。 包括反射表面的EUV反射表面形貌设置在基板的表面上，并且通过机械力或热变形来操纵。 衬底包括多个空腔，其中每个空腔耦合到变形元件，该变形元件被配置为膨胀空腔的体积，并因此使反射表面的一部分在每个空腔之上变形，以便通过热变形来对反射表面进行局部控制 受到电流的电阻材料或由腔内的加压气体引起的机械变形或压电效应。
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公开(公告)号：US20210232054A1
公开(公告)日：2021-07-29
申请号：US17233203
申请日：2021-04-16
发明人： Yu-Fu Lin , Shih-Chang Shih , Chia-Chen Chen
摘要： The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
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公开(公告)号：US11054756B2
公开(公告)日：2021-07-06
申请号：US16902087
申请日：2020-06-15
发明人： Yu-Fu Lin , Tung-Jung Chang , Chia-Chen Chen
摘要： An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.
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公开(公告)号：US20190079418A1
公开(公告)日：2019-03-14
申请号：US15704549
申请日：2017-09-14
发明人： Yu-Fu Lin , Shih-Chang Shih , Chia-Chen Chen
IPC分类号： G03F7/20
摘要： The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
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公开(公告)号：US09665007B2
公开(公告)日：2017-05-30
申请号：US15249989
申请日：2016-08-29
发明人： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
CPC分类号： G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
摘要： An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
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10.发明授权公开(公告)号：US08988652B2
公开(公告)日：2015-03-24
申请号：US13654750
申请日：2012-10-18
发明人： Shu-Hao Chang , Tsiao-Chen Wu , Chia-Hao Hsu , Chia-Chen Chen , Ying-Yu Chen , Tzu-Li Lee , Shang-Chieh Chien , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F7/20
CPC分类号： G03F7/2002 , G03F7/20 , G03F7/70916 , G03F7/70933
摘要： A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.
摘要翻译： 提供了紫外线（UV）和极紫外（EUV）光刻图案的方法和装置。 产生UV或EUV光束并将其引导到设置在载物台上并涂覆有光致抗蚀剂的基板的表面。 惰性气体层的层流被引导穿过并且紧邻在曝光期间涂覆有光致抗蚀剂的基底表面，即光刻操作。 惰性气体迅速耗尽并且在曝光位置包括短的共振时间。 惰性气体流动防止烟气和其它由光致抗蚀剂脱气产生的污染物沉淀并污染光刻设备的其它特征。
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