Invention Grant
- Patent Title: Ultra-thin metal wires formed through selective deposition
- Patent Title (中): 通过选择性沉积形成超细金属线
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Application No.: US14025047Application Date: 2013-09-12
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Publication No.: US09558999B2Publication Date: 2017-01-31
- Inventor: Juntao Li , Chih-Chao Yang , Yunpeng Yin
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L21/288
Abstract:
The embodiments of the present invention relate generally to the fabrication of integrated circuits, and more particularly to a structure and method for fabricating a pair of ultra-thin metal wires in an opening using a selective deposition process.
Public/Granted literature
- US20150069625A1 ULTRA-THIN METAL WIRES FORMED THROUGH SELECTIVE DEPOSITION Public/Granted day:2015-03-12
Information query
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