公开(公告)号：US10529858B2

公开(公告)日：2020-01-07

申请号：US15913194

申请日：2018-03-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeng Yin

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.

公开(公告)号：US09293345B2

公开(公告)日：2016-03-22

申请号：US13968807

申请日：2013-08-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

IPC: H01L21/302 ,  H01L21/311 ,  H01L29/78 ,  H01L21/308 ,  H01L29/417 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L29/66

CPC classification number: H01L21/31111 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L29/0886 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: Semiconductor devices and sidewall image transfer methods with a spin on hardmask. Methods for forming fins include forming a trench through a stack of layers that includes a top and bottom insulator layer, and a layer to be patterned on a substrate; isotropically etching the top and bottom insulator layers; forming a hardmask material in the trench to the level of the bottom insulator layer; isotropically etching the top insulator layer; and etching the bottom insulator layer and the layer to be patterned down to the substrate to form fins from the layer to be patterned.

Abstract translation: 半导体器件和侧壁图像传输方法，在硬掩模上旋转。 用于形成翅片的方法包括通过包括顶部和底部绝缘体层的层叠层和在基底上待图案化的层形成沟槽; 各向同性蚀刻顶部和底部绝缘体层; 在所述沟槽中形成硬掩模材料至所述底部绝缘体层的水平面; 各向同性蚀刻顶部绝缘体层; 并且将底部绝缘体层和待图案化的层蚀刻到衬底上以从待图案化的层形成翅片。

公开(公告)号：US09558999B2

公开(公告)日：2017-01-31

申请号：US14025047

申请日：2013-09-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/288

CPC classification number: H01L21/76885 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76852 ,  H01L21/76879

Abstract: The embodiments of the present invention relate generally to the fabrication of integrated circuits, and more particularly to a structure and method for fabricating a pair of ultra-thin metal wires in an opening using a selective deposition process.

Abstract translation: 本发明的实施例一般涉及集成电路的制造，更具体地涉及一种使用选择性沉积工艺在开口中制造一对超薄金属线的结构和方法。

公开(公告)号：US09330965B2

公开(公告)日：2016-05-03

申请号：US14837827

申请日：2015-08-27

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

公开(公告)号：US09219007B2

公开(公告)日：2015-12-22

申请号：US13913823

申请日：2013-06-10

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

公开(公告)号：US09373580B2

公开(公告)日：2016-06-21

申请号：US14140060

申请日：2013-12-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC: H01L21/00 ,  H01L23/522 ,  G03F7/00 ,  G03F7/09 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

Abstract: A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

Abstract translation: 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US09257334B2

公开(公告)日：2016-02-09

申请号：US14837865

申请日：2015-08-27

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

公开(公告)号：US20140363969A1

公开(公告)日：2014-12-11

申请号：US13913823

申请日：2013-06-10

Applicant: Globalfoundries Inc. ,  International Business Machines Corporation

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔打开通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。

公开(公告)号：US20180197980A1

公开(公告)日：2018-07-12

申请号：US15913194

申请日：2018-03-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hong He ,  Chiahsun Tseng ,  Junli Wang ,  Chun-chen Yeh ,  Yunpeng Yin

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

Abstract: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.

公开(公告)号：US20150371896A1

公开(公告)日：2015-12-24

申请号：US14837827

申请日：2015-08-27

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

Inventor： Hsueh-Chung Chen ,  Yongan Xu ,  Yunpeng Yin ,  Ailian Zhao

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897 ,  H01L21/76898

Abstract: A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Abstract translation: 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。