A semiconductor device is made by providing a first semiconductor die having a plurality of contact pads formed over a first surface of the first semiconductor die and having a plurality of through-silicon vias (TSVs) formed within the first semiconductor die. A second semiconductor die is mounted to the first surface of the first semiconductor die using a plurality of solder bumps. At least one of the solder bumps is in electrical communication with the TSVs in the first semiconductor die. The second semiconductor die is mounted to a printed circuit board (PCB) using an adhesive material. A plurality of solder bumps is formed to connect the contact pads of the first semiconductor die to the PCB. An encapsulant is deposited over the first semiconductor die and the second semiconductor die. An interconnect structure is formed over a back surface of the PCB.