Invention Grant
US09559176B2 FinFET conformal junction and abrupt junction with reduced damage method and device
有权
FinFET保形结和突点，损坏方法和设备减少
- Patent Title: FinFET conformal junction and abrupt junction with reduced damage method and device
- Patent Title (中): FinFET保形结和突点，损坏方法和设备减少
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Application No.: US15180312Application Date: 2016-06-13
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Publication No.: US09559176B2Publication Date: 2017-01-31
- Inventor: Peijie Feng , Yanxiang Liu , Shesh Mani Pandey , Jianwei Peng , Francis Benistant
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/417 ; H01L29/78 ; H01L29/06 ; H01L29/45 ; H01L27/092 ; H01L21/285 ; H01L21/324 ; H01L21/8234
Abstract:
A method of forming a source/drain region with abrupt vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a first mask over a fin of a first polarity FET and source/drain regions of the first polarity FET; forming spacers on opposite sides of a fin of a second polarity FET, the second polarity being opposite the first polarity, on each side of a gate electrode; implanting a first dopant into the fin of the second polarity FET; etching a cavity in the fin of the second polarity FET on each side of the gate electrode; removing the first mask; performing rapid thermal anneal (RTA); epitaxially growing a source/drain region of the second polarity FET in each cavity; forming a second mask over the fin of the first polarity FET and source/drain regions of the first polarity FET; and implanting a second dopant in the source/drain regions of the second polarity FET.
Public/Granted literature
- US20160293718A1 FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE METHOD AND DEVICE Public/Granted day:2016-10-06
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