Invention Grant
- Patent Title: Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device
- Patent Title (中): 电极和栅电极之间的绝缘膜厚度变化的半导体器件及半导体器件的制造方法
-
Application No.: US14271277Application Date: 2014-05-06
-
Publication No.: US09559183B2Publication Date: 2017-01-31
- Inventor: Takashi Inoue , Tatsuo Nakayama , Yasuhiro Okamoto , Hiroshi Kawaguchi , Toshiyuki Takewaki , Nobuhiro Nagura , Takayuki Nagai , Yoshinao Miura , Hironobu Miyamoto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2013-116659 20130603
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/201 ; H01L29/205 ; H01L29/51 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/40 ; H01L21/336 ; H01L29/45 ; H01L29/20
Abstract:
To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and drain and source electrodes on the barrier layer on both sides of the gate electrode. The gate insulating film has a first portion made of a first insulating film and extending from the end portion of the trench to the side of the drain electrode and a second portion made of first and second insulating films and placed on the side of the drain electrode relative to the first portion. The on resistance can be reduced by decreasing the thickness of the first portion at the end portion of the trench on the side of the drain electrode.
Public/Granted literature
- US20140353720A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-12-04
Information query
IPC分类:
