Invention Grant
- Patent Title: Method of manufacturing nitride semiconductor element
- Patent Title (中): 氮化物半导体元件的制造方法
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Application No.: US14526740Application Date: 2014-10-29
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Publication No.: US09559253B2Publication Date: 2017-01-31
- Inventor: Junya Narita , Yohei Wakai , Kazuto Okamoto , Mizuki Nishioka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Mori & Ward, LLP
- Priority: JP2013-223810 20131029
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L33/00
Abstract:
A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.
Public/Granted literature
- US20150118775A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT Public/Granted day:2015-04-30
Information query
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