公开(公告)号：US09525103B2

公开(公告)日：2016-12-20

申请号：US14734961

申请日：2015-06-09

申请人： NICHIA CORPORATION

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US10381516B2

公开(公告)日：2019-08-13

申请号：US15216402

申请日：2016-07-21

申请人： NICHIA CORPORATION

发明人： Yohei Wakai ,  Masahiko Onishi

IPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/44 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/24 ,  H01L33/58

摘要： A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.

公开(公告)号：US20140306265A1

公开(公告)日：2014-10-16

申请号：US14314516

申请日：2014-06-25

申请人： NICHIA CORPORATION

发明人： Junya NARITA ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/32

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US09559253B2

公开(公告)日：2017-01-31

申请号：US14526740

申请日：2014-10-29

申请人： NICHIA CORPORATION

发明人： Junya Narita ,  Yohei Wakai ,  Kazuto Okamoto ,  Mizuki Nishioka

IPC分类号： H01L21/28 ,  H01L33/00

CPC分类号： H01L33/0095

摘要： A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

摘要翻译： 制造氮化物半导体元件的方法包括：准备具有氮化物半导体层的晶片，所述氮化物半导体层包含p型掺杂剂，通过将激光束聚焦在晶片上形成改变部分，并且在形成改变部分之后，形成p型氮化物 半导体层通过使晶片退火。

公开(公告)号：US09070814B2

公开(公告)日：2015-06-30

申请号：US14314516

申请日：2014-06-25

申请人： NICHIA CORPORATION

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/32 ,  H01L33/10 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US08847262B2

公开(公告)日：2014-09-30

申请号：US13831138

申请日：2013-03-14

申请人： Nichia Corporation

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/32

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括在主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在从蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US09159868B2

公开(公告)日：2015-10-13

申请号：US14470565

申请日：2014-08-27

申请人： NICHIA CORPORATION

发明人： Yohei Wakai ,  Hiroaki Matsumura ,  Kenji Oka

IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/20 ,  H01L33/36 ,  H01L33/44

CPC分类号： H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

摘要： A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

摘要翻译： 可以提供具有高可靠性和优异的配光特性的半导体发光器件，其配置在与衬底上安装有半导体叠层的表面相反的一侧上的光提取表面上的n电极。 多个凸起布置在光提取表面上的第一凸区域和第二凸区域上。 第二凸区域与第一凸区域和n电极之间的n电极和半导体堆叠体之间的界面相邻。 布置在第一凸区域中的第一凸部的基端位于比n电极和半导体叠层之间的界面更靠近发光层的位置，并且布置在第二凸区域中的第二凸起的基端位于 比第一凸起的基端更靠近n电极和半导体叠层之间的界面。

公开(公告)号：US09054271B2

公开(公告)日：2015-06-09

申请号：US14152765

申请日：2014-01-10

申请人： NICHIA CORPORATION

发明人： Shunsuke Minato ,  Junya Narita ,  Yohei Wakai ,  Yukio Narukawa ,  Motokazu Yamada

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L33/24 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32

CPC分类号： H01L33/24 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/00

摘要： A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

摘要翻译： 提供了在基板上具有凹凸结构的发光元件。 半导体发光元件100在基板10的第一主表面上具有半导体20的发光结构。基板10的第一主表面具有基板突出部11，每个突起的底表面14比 顶表面13处于横截面，或者顶表面13以衬底的顶视图包括在底表面14中。 底面14具有近似多边形的形状，并且顶面13具有大致圆形或多边形形状，其侧面比底面14多。

公开(公告)号：US08883529B2

公开(公告)日：2014-11-11

申请号：US14021551

申请日：2013-09-09

申请人： Nichia Corporation

发明人： Yohei Wakai ,  Hiroaki Matsumura ,  Kenji Oka

IPC分类号： H01L33/02 ,  H01L33/20 ,  H01L33/22 ,  H01L33/00 ,  H01L33/36 ,  H01L33/44

CPC分类号： H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

摘要： A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

摘要翻译： 可以提供具有高可靠性和优异的配光特性的半导体发光器件，其配置在与衬底上安装有半导体叠层的表面相反的一侧上的光提取表面上的n电极。 多个凸起布置在光提取表面上的第一凸区域和第二凸区域上。 第二凸区域与第一凸区域和n电极之间的n电极和半导体堆叠体之间的界面相邻。 布置在第一凸区域中的第一凸部的基端位于比n电极和半导体叠层之间的界面更靠近发光层的位置，并且布置在第二凸区域中的第二凸起的基端位于 比第一凸起的基端更靠近n电极和半导体叠层之间的界面。

公开(公告)号：US08847263B2

公开(公告)日：2014-09-30

申请号：US13831211

申请日：2013-03-14

申请人： Nichia Corporation

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L33/10 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括在主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。