Invention Grant
- Patent Title: Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer
- Patent Title (中): 提供可用于使用牺牲插入层的自旋转移扭矩磁性装置中的垂直磁各向异性磁结的方法
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Application No.: US14712792Application Date: 2015-05-14
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Publication No.: US09559296B2Publication Date: 2017-01-31
- Inventor: Dustin William Erickson , Xueti Tang , Jangeun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L43/00
- IPC: H01L43/00 ; H01L43/12 ; H01L43/08

Abstract:
A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.
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