Invention Grant
- Patent Title: Ultra-low voltage temperature threshold detector
- Patent Title (中): 超低电压温度阈值检测器
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Application No.: US14788714Application Date: 2015-06-30
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Publication No.: US09559665B2Publication Date: 2017-01-31
- Inventor: Amit Chhabra
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Schiphol
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Schiphol
- Agency: Seed IP Law Group LLP
- Main IPC: H03K3/011
- IPC: H03K3/011 ; G11C11/417 ; H03K17/687 ; H01L27/11

Abstract:
An integrated circuit die includes a plurality of transistors formed in a semiconductor substrate, the body regions of the transistors on a doped well region of the semiconductor substrate. A threshold detector selectively applies either a first voltage or second voltage to the doped well region based on whether the temperature of the semiconductor substrate is above or below a threshold temperature.
Public/Granted literature
- US20170005641A1 ULTRA-LOW VOLTAGE TEMPERATURE THRESHOLD DETECTOR Public/Granted day:2017-01-05
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