Invention Grant
- Patent Title: Pixel readout architecture for full well capacity extension
- Patent Title (中): 像素读出架构,用于完整的容量扩展
-
Application No.: US14562380Application Date: 2014-12-05
-
Publication No.: US09560296B2Publication Date: 2017-01-31
- Inventor: Biay-Cheng Hseih , Jiafu Luo , Sergiu Radu Goma
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H04N5/363
- IPC: H04N5/363 ; H04N5/378 ; H04N5/374 ; H04N5/355 ; H04N5/3745

Abstract:
Certain aspects relate to systems and techniques for full well capacity extension. For example, a storage capacitor included in the pixel readout architecture can enable multiple charge dumps from a pixel in the analog domain, extending the full well capacity of the pixel. Further, multiple reads can be integrated in the digital domain using a memory, for example DRAM, in communication with the pixel readout architecture. This also can effectively multiply a small pixel's full well capacity. In some examples, multiple reads in the digital domain can be used to reduce, eliminate, or compensate for kTC noise in the pixel readout architecture.
Public/Granted literature
- US20160165160A1 PIXEL READOUT ARCHITECTURE FOR FULL WELL CAPACITY EXTENSION Public/Granted day:2016-06-09
Information query