Invention Grant
- Patent Title: Aging sensor for a static random access memory (SRAM)
- Patent Title (中): 用于静态随机存取存储器（SRAM）的老化传感器
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Application No.: US14720930Application Date: 2015-05-25
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Publication No.: US09564210B2Publication Date: 2017-02-07
- Inventor: Venkatasubramanian Narayanan , Alex Dongkyu Park
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/417 ; H01L27/11
Abstract:
A static random access memory (SRAM) includes a first bitcell and a second bitcell. The first bitcell includes an aging transistor and the second bitcell includes a non-aging transistor. An aging sensor is coupled between the first bitcell and the second bitcell to determine an amount of aging associated with the aging transistor. In one aspect, the amount of aging associated with the aging transistor is determined based on a difference between a voltage or current associated with the aging transistor and a voltage or current associated with the non-aging transistor.
Public/Granted literature
- US20160351250A1 AGING SENSOR FOR A STATIC RANDOM ACCESS MEMORY (SRAM) Public/Granted day:2016-12-01
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