发明授权
US09564433B2 Semiconductor device with improved contact structure and method of forming same
有权
具有改进的接触结构的半导体器件及其形成方法
- 专利标题： Semiconductor device with improved contact structure and method of forming same
- 专利标题（中）： 具有改进的接触结构的半导体器件及其形成方法
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申请号： US14617467申请日： 2015-02-09
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公开(公告)号： US09564433B2公开(公告)日： 2017-02-07
- 发明人: Jhon-Jhy Liaw
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/768 ; H01L21/321 ; H01L29/06 ; H01L29/66 ; H01L21/8234 ; H01L23/485 ; H01L23/528 ; H01L27/11 ; H01L27/02 ; H01L23/522
摘要：
A contact structure includes a first contact formed in a first dielectric layer connecting to the source/drain region of a MOS transistor, and a second contact formed in a second dielectric layer connecting to a gate region of a MOS transistor or to a first contact. A butted contact structure abutting a source/drain region and a gate electrode includes a first contact formed in a first dielectric layer connecting to the source/drain region of a MOS transistor, and a second contact formed in a second dielectric layer with one end resting on the gate electrode and the other end in contact with the first contact.
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