Invention Grant
- Patent Title: Micromechanical semiconductor sensing device
- Patent Title (中): 微机械半导体感测装置
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Application No.: US14687835Application Date: 2015-04-15
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Publication No.: US09567211B2Publication Date: 2017-02-14
- Inventor: Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: G01B7/16
- IPC: G01B7/16 ; B81B7/02 ; G01L9/00 ; G01L19/02 ; G01L19/00 ; B81B3/00 ; G01L1/18
Abstract:
Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Public/Granted literature
- US20150217994A1 Micromechanical Semiconductor Sensing Device Public/Granted day:2015-08-06
Information query
