Invention Grant
- Patent Title: Composite protective layer for photoelectrode structure, photoelectrode structure including the composite protective layer, and photoelectrochemical cell including photoelectrode structure
- Patent Title (中): 光电极结构复合保护层，复合保护层光电结构，光电结构光电化学电池
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Application No.: US14143271Application Date: 2013-12-30
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Publication No.: US09567680B2Publication Date: 2017-02-14
- Inventor: Tae-gon Kim , Jeong-hee Lee , Seoung-jae Im , Tae-hyung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0010097 20130129
- Main IPC: C25B11/04
- IPC: C25B11/04 ; C01B3/04 ; C25B1/00
Abstract:
A composite protective layer for a photoelectrode, the composite protective layer including a chemical protective layer; and a physical protective layer, wherein the chemical protective layer has corrosion rate of 0.1 Coulombs per square centimeter per 10 hours or less when evaluated at a water decomposition potential, and the physical protective layer has a moisture transmittance rate of 0.001 grams per square meter per day or less and has an electrical conductivity.
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