Invention Grant
- Patent Title: Substrate liquid treatment apparatus and substrate liquid treatment method
- Patent Title (中): 底物液体处理装置及底物液体处理方法
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Application No.: US14651816Application Date: 2013-12-12
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Publication No.: US09570327B2Publication Date: 2017-02-14
- Inventor: Masahiro Fukuda , Akihiro Kubo , Taro Yamamoto , Kenzi Yada , Atsushi Ookouchi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Minato-Ku
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Minato-Ku
- Agency: Burr & Brown, PLLC
- Priority: JP2012-271880 20121213
- International Application: PCT/JP2013/083367 WO 20131212
- International Announcement: WO2014/092160 WO 20140619
- Main IPC: B08B5/02
- IPC: B08B5/02 ; B08B5/00 ; H01L21/67

Abstract:
A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.
Public/Granted literature
- US20150318193A1 SUBSTRATE LIQUID TREATMENT APPARATUS AND SUBSTRATE LIQUID TREATMENT METHOD Public/Granted day:2015-11-05
Information query
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