Invention Grant
- Patent Title: Entrenched transfer gate
- Patent Title (中): 固定的转移门
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Application No.: US13897189Application Date: 2013-05-17
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Publication No.: US09570507B2Publication Date: 2017-02-14
- Inventor: Hidetoshi Nozaki , Tiejun Dai
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146 ; H01L29/10 ; H01L29/66
Abstract:
An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.
Public/Granted literature
- US20130248937A1 ENTRENCHED TRANSFER GATE Public/Granted day:2013-09-26
Information query
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