Invention Grant
- Patent Title: Semiconductor device including a vertical edge termination structure and method of manufacturing
- Patent Title (中): 包括垂直边缘终端结构和制造方法的半导体器件
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Application No.: US14242366Application Date: 2014-04-01
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Publication No.: US09570542B2Publication Date: 2017-02-14
- Inventor: Alexander Breymesser , Andre Brockmeier , Elmar Falck , Francisco Javier Santos Rodriguez , Holger Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/32 ; H01L29/40 ; H01L29/66 ; H01L29/739 ; H01L29/861 ; H01L21/762 ; H01L29/16 ; H01L29/20 ; H01L29/22
Abstract:
A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.
Public/Granted literature
- US20150279930A1 SEMICONDUCTOR DEVICE INCLUDING A VERTICAL EDGE TERMINATION STRUCTURE AND METHOD OF MANUFACTURING Public/Granted day:2015-10-01
Information query
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