Invention Grant
US09570577B2 Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
有权
在半导体台面形成源极区的半导体器件和绝缘栅双极晶体管
- Patent Title: Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
- Patent Title (中): 在半导体台面形成源极区的半导体器件和绝缘栅双极晶体管
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Application No.: US14275378Application Date: 2014-05-12
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Publication No.: US09570577B2Publication Date: 2017-02-14
- Inventor: Roman Baburske , Matteo Dainese , Peter Lechner , Hans-Joachim Schulze , Johannes Georg Laven
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L29/66 ; H01L29/739 ; H01L29/10 ; H01L29/08 ; H01L29/40 ; H01L29/423 ; H01L29/04 ; H01L29/06
Abstract:
A semiconductor device includes a semiconductor mesa that includes at least one body zone forming first pn junctions with source zones and a second pn junction with a drift zone. Electrode structures are on opposite sides of the semiconductor mesa. At least one of the electrode structures includes a gate electrode configured to control a charge carrier flow through the at least one body zone. In a separation region between the source zones, which are arranged along an extension direction of the semiconductor mesa, the semiconductor mesa includes at least one partial or complete constriction.
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