Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.