公开(公告)号：US09553009B2

公开(公告)日：2017-01-24

申请号：US14522937

申请日：2014-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In Sim ,  Gyeong Seon Park ,  Kyung Ja Lim ,  Seung Woo Choi ,  O Hak Kwon

IPC: B32B38/10 ,  H01L21/683 ,  B32B43/00 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6838 ,  B32B43/006 ,  H01L21/67092 ,  H01L21/68735 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1132 ,  Y10T156/1153 ,  Y10T156/1168 ,  Y10T156/1911 ,  Y10T156/1944 ,  Y10T156/1978

Abstract: There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

Abstract translation: 提供了一种用于从包括支撑衬底，半导体层和生长衬底的层压结构分离生长衬底的衬底分离装置和方法。 该装置包括：第一基座，其构造成在其上保持层压结构，并且包括第一保持单元，其构造成保持限定层压结构的底表面的支撑基板;以及加热单元，其构造成加热层叠结构; 以及第二基座，其包括设置在所述第一保持单元上方的第二保持单元，并且构造成保持限定所述层叠结构的上表面的所述生长基板。

公开(公告)号：US10978618B2

公开(公告)日：2021-04-13

申请号：US17005643

申请日：2020-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US10074773B2

公开(公告)日：2018-09-11

申请号：US15671275

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In Sim ,  Ju Heon Yoon ,  Gi Bum Kim ,  Ji Hye Lee

IPC: H01L33/36 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L33/007 ,  H01L33/38 ,  H01L33/42 ,  H01L33/486 ,  H01L33/60 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/13101 ,  H01L2224/16245 ,  H01L2933/0016 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.

公开(公告)号：US10763397B2

公开(公告)日：2020-09-01

申请号：US16202793

申请日：2018-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US09570660B2

公开(公告)日：2017-02-14

申请号：US14799675

申请日：2015-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In Sim ,  Sang Yeob Song ,  Jong Hoon Ha ,  Gi Bum Kim ,  Seung Woo Choi

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。

公开(公告)号：US20210234072A1

公开(公告)日：2021-07-29

申请号：US17226424

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US10811568B2

公开(公告)日：2020-10-20

申请号：US16181592

申请日：2018-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun Kim ,  Jae In Sim ,  Ju Heon Yoon

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/52 ,  H01L33/10

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.

公开(公告)号：US09379288B2

公开(公告)日：2016-06-28

申请号：US14615116

申请日：2015-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae Choi ,  Jae In Sim ,  Seok Min Hwang ,  Jin Hyun Lee ,  Myong Soo Cho ,  Ki Yeol Park

IPC: H01L29/20 ,  H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/62 ,  H01L23/00

CPC classification number: H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.

Abstract translation: 提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层 第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

公开(公告)号：US11929451B2

公开(公告)日：2024-03-12

申请号：US17226424

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US10573786B2

公开(公告)日：2020-02-25

申请号：US16055651

申请日：2018-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon Yoon ,  Tae Hun Kim ,  Jae In Sim

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/46 ,  H01L33/52 ,  H01L33/42 ,  H01L23/00

Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.