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公开(公告)号：US09553009B2
公开(公告)日：2017-01-24
申请号：US14522937
申请日：2014-10-24
发明人： Jae In Sim , Gyeong Seon Park , Kyung Ja Lim , Seung Woo Choi , O Hak Kwon
IPC分类号： B32B38/10 , H01L21/683 , B32B43/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/6838 , B32B43/006 , H01L21/67092 , H01L21/68735 , H01L2221/68381 , H01L2221/68386 , Y10T156/1132 , Y10T156/1153 , Y10T156/1168 , Y10T156/1911 , Y10T156/1944 , Y10T156/1978
摘要： There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.
摘要翻译： 提供了一种用于从包括支撑衬底，半导体层和生长衬底的层压结构分离生长衬底的衬底分离装置和方法。 该装置包括：第一基座，其构造成在其上保持层压结构，并且包括第一保持单元，其构造成保持限定层压结构的底表面的支撑基板;以及加热单元，其构造成加热层叠结构; 以及第二基座，其包括设置在所述第一保持单元上方的第二保持单元，并且构造成保持限定所述层叠结构的上表面的所述生长基板。
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公开(公告)号：US10978618B2
公开(公告)日：2021-04-13
申请号：US17005643
申请日：2020-08-28
发明人： JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC分类号： H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/42 , H01L33/46
摘要： A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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公开(公告)号：US10074773B2
公开(公告)日：2018-09-11
申请号：US15671275
申请日：2017-08-08
发明人： Jae In Sim , Ju Heon Yoon , Gi Bum Kim , Ji Hye Lee
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/0243 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L33/007 , H01L33/38 , H01L33/42 , H01L33/486 , H01L33/60 , H01L2224/0401 , H01L2224/05001 , H01L2224/13101 , H01L2224/16245 , H01L2933/0016 , H01L2924/014 , H01L2924/00014
摘要： A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.
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公开(公告)号：US10763397B2
公开(公告)日：2020-09-01
申请号：US16202793
申请日：2018-11-28
发明人： JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC分类号： H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/42
摘要： A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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5.发明授权Semiconductor light emitting device and semiconductor light emitting apparatus having the same 有权半导体发光器件和具有该半导体发光器件的半导体发光器件公开(公告)号：US09570660B2
公开(公告)日：2017-02-14
申请号：US14799675
申请日：2015-07-15
发明人： Jae In Sim , Sang Yeob Song , Jong Hoon Ha , Gi Bum Kim , Seung Woo Choi
CPC分类号： H01L33/46 , H01L33/38 , H01L33/62 , H01L2224/16245
摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.
摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。
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公开(公告)号：US11929451B2
公开(公告)日：2024-03-12
申请号：US17226424
申请日：2021-04-09
发明人： JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC分类号： H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/38 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L33/405 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/42 , H01L33/46 , H01L33/502 , H01L33/60 , H01L33/62 , H01L2933/0016
摘要： A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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公开(公告)号：US10573786B2
公开(公告)日：2020-02-25
申请号：US16055651
申请日：2018-08-06
发明人： Ju Heon Yoon , Tae Hun Kim , Jae In Sim
摘要： A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.
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公开(公告)号：US10541350B2
公开(公告)日：2020-01-21
申请号：US15985236
申请日：2018-05-21
发明人： Ju Heon Yoon , Jae In Sim , Tae Hun Kim , Gi Bum Kim
摘要： A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.
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公开(公告)号：US20210234072A1
公开(公告)日：2021-07-29
申请号：US17226424
申请日：2021-04-09
发明人： JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC分类号： H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/42
摘要： A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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10.发明授权公开(公告)号：US10811568B2
公开(公告)日：2020-10-20
申请号：US16181592
申请日：2018-11-06
发明人： Tae Hun Kim , Jae In Sim , Ju Heon Yoon
摘要： A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.
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